IPB025N10N3GE8187ATMA1 - MOSFET N-CH 100V 180A TO263-7

Producentens varenummer

IPB025N10N3GE8187ATMA1

Intern Part Number

AX-IPB025N10N3GE8187ATMA1

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 100V 180A TO263-7

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

143225 Pieces

henvisning Pris

~~USD 1.95879~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IPB025N10N3GE8187ATMA1 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IPB025N10N3GE8187ATMA1

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IPB025N10N3GE8187ATMA1

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET N-CH 100V 180A TO263-7

Serie : OptiMOS™

Del Status : Not For New Designs

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 100V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 180A

Drevspænding (Maks. Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 2.5 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 275µA

Gate Charge (Qg) (Max) @ Vgs : 206nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 14800pF @ 50V

FET-funktion : -

Power Dissipation (Max) : 300W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PG-TO263-7

Pakke / tilfælde : TO-263-7, D²Pak (6 Leads + Tab)

Vægt : -

Tilstand : Nye og originale

relaterede links : IPB025N , IPB025N10N3

Dokumenter til IPB025N10N3GE8187ATMA1

Dataark : IPB025N10N3GE8187ATMA1.pdf

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