SPB08P06PGATMA1 - MOSFET P-CH 60V 8.8A TO-263

Producentens varenummer

SPB08P06PGATMA1

Intern Part Number

AX-SPB08P06PGATMA1

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET P-CH 60V 8.8A TO-263

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

1026800 Pieces

henvisning Pris

~~USD 0.27324~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SPB08P06PGATMA1 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SPB08P06PGATMA1

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SPB08P06PGATMA1

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET P-CH 60V 8.8A TO-263

Serie : SIPMOS®

Del Status : Active

FET Type : P-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 60V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 8.8A (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 300 mOhm @ 6.2A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 13nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 420pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 42W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : D²PAK (TO-263AB)

Pakke / tilfælde : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vægt : -

Tilstand : Nye og originale

relaterede links : SPB08 , SPB08P0

Dokumenter til SPB08P06PGATMA1

Dataark : SPB08P06PGATMA1.pdf

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