EPC2110ENGRT - GAN TRANS 2N-CH 120V BUMPED DIE

Producentens varenummer

EPC2110ENGRT

Intern Part Number

AX-EPC2110ENGRT

Fabrikant

EPC

Kort beskrivelse

GAN TRANS 2N-CH 120V BUMPED DIE

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

457535 Pieces

henvisning Pris

~~USD 0.6132~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har EPC2110ENGRT på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for EPC2110ENGRT

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : EPC2110ENGRT

Fabrikant : EPC

Beskrivelse : GAN TRANS 2N-CH 120V BUMPED DIE

Serie : eGaN®

Del Status : Active

FET Type : 2 N-Channel (Dual) Common Source

FET-funktion : GaNFET (Gallium Nitride)

Afløb til Source Voltage (VDSS) : 120V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 3.4A

Rds On (Max) @ Id, Vgs : 60 mOhm @ 4A, 5V

Vgs (th) (Max) @ Id : 2.5V @ 700µA

Gate Charge (Qg) (Max) @ Vgs : 0.8nC @ 5V

Inputkapacitans (Ciss) (Max) @ Vds : 80pF @ 60V

Strøm - Max : -

Driftstemperatur : -40°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / tilfælde : Die

Leverandør Device Package : Die

Vægt : -

Tilstand : Nye og originale

relaterede links : EPC2 , EPC211

Dokumenter til EPC2110ENGRT

Dataark : EPC2110ENGRT.pdf

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