IPG16N10S4L61AATMA1 - MOSFET 2N-CH 8TDSON
Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
MOSFET 2N-CH 8TDSON
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
1143145 Pieces
henvisning Pris
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])
- AX Semiconductor har IPG16N10S4L61AATMA1 på lager til sælge.
- Shipping muligheder og forsendelse tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsmuligheder:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifikationer for IPG16N10S4L61AATMA1
Kvalitet Garanti :
365 dage garanti
Stock Resource :
Franchise Distributør / Producent Direct
Oprindelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer :
IPG16N10S4L61AATMA1
Fabrikant :
Infineon Technologies
Beskrivelse :
MOSFET 2N-CH 8TDSON
Serie :
Automotive, AEC-Q101, OptiMOS™
Del Status :
Active
FET Type :
2 N-Channel (Dual)
FET-funktion :
Logic Level Gate
Afløb til Source Voltage (VDSS) :
100V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
16A
Rds On (Max) @ Id, Vgs :
61 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 90µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
845pF @ 25V
Strøm - Max :
29W
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Pakke / tilfælde :
8-PowerVDFN
Leverandør Device Package :
PG-TDSON-8-10
Vægt :
-
Tilstand :
Nye og originale
Dokumenter til IPG16N10S4L61AATMA1
Dataark :
IPG16N10S4L61AATMA1.pdf
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