SQ2361AEES-T1_GE3 - MOSFET P-CH 60V 2.5A SSOT23

Producentens varenummer

SQ2361AEES-T1_GE3

Intern Part Number

AX-SQ2361AEES-T1_GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET P-CH 60V 2.5A SSOT23

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

1765950 Pieces

henvisning Pris

~~USD 0.158874~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SQ2361AEES-T1_GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SQ2361AEES-T1_GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SQ2361AEES-T1_GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET P-CH 60V 2.5A SSOT23

Serie : Automotive, AEC-Q101, TrenchFET®

Del Status : Active

FET Type : P-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 60V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 2.8A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 170 mOhm @ 2.4A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 620pF @ 30V

FET-funktion : -

Power Dissipation (Max) : 2W (Tc)

Driftstemperatur : -55°C ~ 175°C (TA)

Monteringstype : Surface Mount

Leverandør Device Package : -

Pakke / tilfælde : TO-236-3, SC-59, SOT-23-3

Vægt : -

Tilstand : Nye og originale

relaterede links : SQ236 , SQ2361AE

Dokumenter til SQ2361AEES-T1_GE3

Dataark : SQ2361AEES-T1_GE3.pdf

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