IDB12E120ATMA1 - DIODE GEN PURP 1.2KV 28A TO263-3

Producentens varenummer

IDB12E120ATMA1

Intern Part Number

AX-IDB12E120ATMA1

Fabrikant

Infineon Technologies

Kort beskrivelse

DIODE GEN PURP 1.2KV 28A TO263-3

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

16696 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IDB12E120ATMA1 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IDB12E120ATMA1

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IDB12E120ATMA1

Fabrikant : Infineon Technologies

Beskrivelse : DIODE GEN PURP 1.2KV 28A TO263-3

Serie : -

Del Status : Obsolete

Diodetype : Standard

Spænding - DC-omvendt (Vr) (Max) : 1200V

Nuværende - Gennemsnitlig Rectified (Io) : 28A (DC)

Spænding - Videresend (Vf) (Max) @ Hvis : 2.15V @ 12A

Hastighed : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 150ns

Nuværende - Reverse Lækage @ Vr : 100µA @ 1200V

Kapacitans @ Vr, F : -

Monteringstype : Surface Mount

Pakke / tilfælde : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Leverandør Device Package : PG-TO263-3-2

Driftstemperatur - Junction : -55°C ~ 150°C

Vægt : -

Tilstand : Nye og originale

relaterede links : IDB1 , IDB12E1

Dokumenter til IDB12E120ATMA1

Dataark : IDB12E120ATMA1.pdf

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