SIHB12N60ET1-GE3 - MOSFET N-CH 600V 12A TO263

Producentens varenummer

SIHB12N60ET1-GE3

Intern Part Number

AX-SIHB12N60ET1-GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET N-CH 600V 12A TO263

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

198975 Pieces

henvisning Pris

~~USD 1.41~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SIHB12N60ET1-GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SIHB12N60ET1-GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SIHB12N60ET1-GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET N-CH 600V 12A TO263

Serie : E

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 600V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 12A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 380 mOhm @ 6A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 58nC @ 10V

Vgs (Max) : ±30V

Inputkapacitans (Ciss) (Max) @ Vds : 937pF @ 100V

FET-funktion : -

Power Dissipation (Max) : 147W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : TO-263 (D²Pak)

Pakke / tilfælde : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vægt : -

Tilstand : Nye og originale

relaterede links : SIHB1 , SIHB12N6

Dokumenter til SIHB12N60ET1-GE3

Dataark : SIHB12N60ET1-GE3.pdf

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