IPD082N10N3GBTMA1 - MOSFET N-CH 100V 80A TO252-3

Producentens varenummer

IPD082N10N3GBTMA1

Intern Part Number

AX-IPD082N10N3GBTMA1

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 100V 80A TO252-3

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

8304 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IPD082N10N3GBTMA1 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IPD082N10N3GBTMA1

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IPD082N10N3GBTMA1

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET N-CH 100V 80A TO252-3

Serie : OptiMOS™

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 100V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 80A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 73A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 75µA

Gate Charge (Qg) (Max) @ Vgs : 55nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 3980pF @ 50V

FET-funktion : -

Power Dissipation (Max) : 125W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PG-TO252-3

Pakke / tilfælde : TO-252-3, DPak (2 Leads + Tab), SC-63

Vægt : -

Tilstand : Nye og originale

relaterede links : IPD08 , IPD082N1

Dokumenter til IPD082N10N3GBTMA1

Dataark : IPD082N10N3GBTMA1.pdf

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