1N8026-GA - DIODE SILICON 1.2KV 8A TO257

Producentens varenummer
Intern Part Number
Kort beskrivelse
DIODE SILICON 1.2KV 8A TO257
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
9368 Pieces
henvisning Pris
USD 124.86
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har 1N8026-GA på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for 1N8026-GA

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : 1N8026-GA
Fabrikant : GeneSiC Semiconductor
Beskrivelse : DIODE SILICON 1.2KV 8A TO257
Serie : -
Del Status : Obsolete
Diodetype : Silicon Carbide Schottky
Spænding - DC-omvendt (Vr) (Max) : 1200V
Nuværende - Gennemsnitlig Rectified (Io) : 8A (DC)
Spænding - Videresend (Vf) (Max) @ Hvis : 1.6V @ 2.5A
Hastighed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Nuværende - Reverse Lækage @ Vr : 10µA @ 1200V
Kapacitans @ Vr, F : 237pF @ 1V, 1MHz
Monteringstype : Through Hole
Pakke / tilfælde : TO-257-3
Leverandør Device Package : TO-257
Driftstemperatur - Junction : -55°C ~ 250°C
Vægt : -
Tilstand : Nye og originale
relaterede links : 1N8 , 1N80

Dokumenter til 1N8026-GA

Dataark : 1N8026-GA.pdf

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