SISS26DN-T1-GE3 - MOSFET N-CHANNEL 60V 60A 1212-8S

Producentens varenummer

SISS26DN-T1-GE3

Intern Part Number

AX-SISS26DN-T1-GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET N-CHANNEL 60V 60A 1212-8S

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

586670 Pieces

henvisning Pris

~~USD 0.478224~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SISS26DN-T1-GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SISS26DN-T1-GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SISS26DN-T1-GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET N-CHANNEL 60V 60A 1212-8S

Serie : TrenchFET® Gen IV

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 60V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 60A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 15A, 10V

Vgs (th) (Max) @ Id : 3.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 37nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 1710pF @ 30V

FET-funktion : -

Power Dissipation (Max) : 57W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PowerPAK® 1212-8S (3.3x3.3)

Pakke / tilfælde : PowerPAK® 1212-8S

Vægt : -

Tilstand : Nye og originale

relaterede links : SISS2 , SISS26D

Dokumenter til SISS26DN-T1-GE3

Dataark : SISS26DN-T1-GE3.pdf

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