EPC2106ENGRT - GAN TRANS 2N-CH 100V BUMPED DIE
Producentens varenummer
Intern Part Number
AX-EPC2106ENGRT
Fabrikant
Kort beskrivelse
GAN TRANS 2N-CH 100V BUMPED DIE
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
596435 Pieces
henvisning Pris
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])
- AX Semiconductor har EPC2106ENGRT på lager til sælge.
- Shipping muligheder og forsendelse tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsmuligheder:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifikationer for EPC2106ENGRT
Kvalitet Garanti :
365 dage garanti
Stock Resource :
Franchise Distributør / Producent Direct
Oprindelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer :
EPC2106ENGRT
Fabrikant :
EPC
Beskrivelse :
GAN TRANS 2N-CH 100V BUMPED DIE
Serie :
eGaN®
Del Status :
Active
FET Type :
2 N-Channel (Half Bridge)
FET-funktion :
GaNFET (Gallium Nitride)
Afløb til Source Voltage (VDSS) :
100V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
1.7A
Rds On (Max) @ Id, Vgs :
70 mOhm @ 2A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs :
0.73nC @ 5V
Inputkapacitans (Ciss) (Max) @ Vds :
75pF @ 50V
Strøm - Max :
-
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / tilfælde :
Die
Leverandør Device Package :
Die
Vægt :
-
Tilstand :
Nye og originale
Dokumenter til EPC2106ENGRT
Dataark :
EPC2106ENGRT.pdf
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