NCP81075DR2G - HIGH PERFORMANCE DUAL MOS

Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
HIGH PERFORMANCE DUAL MOS
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
493740 Pieces
henvisning Pris
USD 0.6318
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har NCP81075DR2G på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for NCP81075DR2G

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : NCP81075DR2G
Fabrikant : ON Semiconductor
Beskrivelse : HIGH PERFORMANCE DUAL MOS
Serie : -
Del Status : Active
Driven konfiguration : High-Side or Low-Side
Kanaltype : Independent
Antal drivere : 2
Gate Type : N-Channel MOSFET
Spænding - Supply : 8.5V ~ 20V
Logisk spænding - VIL, VIH : 0.8V, 2.7V
Nuværende - Peak Output (Source, Sink) : 4A, 4A
Input Type : Non-Inverting
High Side Voltage - Max (Bootstrap) : 200V
Stigning / Falltid (Typ) : 8ns, 7ns
Driftstemperatur : -40°C ~ 140°C (TJ)
Monteringstype : Surface Mount
Pakke / tilfælde : 8-SOIC (0.154", 3.90mm Width)
Leverandør Device Package : 8-SOIC
Vægt : -
Tilstand : Nye og originale
relaterede links : NCP8 , NCP810

Dokumenter til NCP81075DR2G

Dataark : NCP81075DR2G.pdf

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