IRFHM8363TR2PBF - MOSFET 2N-CH 30V 11A 8PQFN

Producentens varenummer

IRFHM8363TR2PBF

Intern Part Number

AX-IRFHM8363TR2PBF

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET 2N-CH 30V 11A 8PQFN

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

28035 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IRFHM8363TR2PBF på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IRFHM8363TR2PBF

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IRFHM8363TR2PBF

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET 2N-CH 30V 11A 8PQFN

Serie : HEXFET®

Del Status : Obsolete

FET Type : 2 N-Channel (Dual)

FET-funktion : Logic Level Gate

Afløb til Source Voltage (VDSS) : 30V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 11A

Rds On (Max) @ Id, Vgs : 14.9 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V

Inputkapacitans (Ciss) (Max) @ Vds : 1165pF @ 10V

Strøm - Max : 2.7W

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / tilfælde : 8-PowerVDFN

Leverandør Device Package : 8-PQFN (3.3x3.3), Power33

Vægt : -

Tilstand : Nye og originale

relaterede links : IRFHM , IRFHM83

Dokumenter til IRFHM8363TR2PBF

Dataark : IRFHM8363TR2PBF.pdf

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