EPC2103ENG - GAN TRANS 2N-CH 80V BUMPED DIE

Producentens varenummer

EPC2103ENG

Intern Part Number

AX-EPC2103ENG

Fabrikant

EPC

Kort beskrivelse

GAN TRANS 2N-CH 80V BUMPED DIE

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

28483 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har EPC2103ENG på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for EPC2103ENG

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : EPC2103ENG

Fabrikant : EPC

Beskrivelse : GAN TRANS 2N-CH 80V BUMPED DIE

Serie : eGaN®

Del Status : Active

FET Type : 2 N-Channel (Half Bridge)

FET-funktion : GaNFET (Gallium Nitride)

Afløb til Source Voltage (VDSS) : 80V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 23A

Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 5V

Vgs (th) (Max) @ Id : 2.5V @ 7mA

Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V

Inputkapacitans (Ciss) (Max) @ Vds : 760pF @ 40V

Strøm - Max : -

Driftstemperatur : -40°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / tilfælde : Die

Leverandør Device Package : Die

Vægt : -

Tilstand : Nye og originale

relaterede links : EPC , EPC21

Dokumenter til EPC2103ENG

Dataark : EPC2103ENG.pdf

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