TPN1110ENH,L1Q - MOSFET N-CH 200V 7.2A 8TSON

Producentens varenummer

TPN1110ENH,L1Q

Intern Part Number

AX-TPN1110ENH,L1Q

Fabrikant

Toshiba Semiconductor and Storage

Kort beskrivelse

MOSFET N-CH 200V 7.2A 8TSON

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

755665 Pieces

henvisning Pris

~~USD 0.37128~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har TPN1110ENH,L1Q på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for TPN1110ENH,L1Q

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : TPN1110ENH,L1Q

Fabrikant : Toshiba Semiconductor and Storage

Beskrivelse : MOSFET N-CH 200V 7.2A 8TSON

Serie : U-MOSVIII-H

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 200V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 7.2A (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 114 mOhm @ 3.6A, 10V

Vgs (th) (Max) @ Id : 4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 600pF @ 100V

FET-funktion : -

Power Dissipation (Max) : 700mW (Ta), 39W (Tc)

Driftstemperatur : 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : 8-TSON Advance (3.3x3.3)

Pakke / tilfælde : 8-PowerVDFN

Vægt : -

Tilstand : Nye og originale

relaterede links : TPN1 , TPN1110

Dokumenter til TPN1110ENH,L1Q

Dataark : TPN1110ENH,L1Q.pdf

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