IAUT165N08S5N029ATMA2 - MOSFET N-CH 165A 80V 120V 8HSOF

Producentens varenummer

IAUT165N08S5N029ATMA2

Intern Part Number

AX-IAUT165N08S5N029ATMA2

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 165A 80V 120V 8HSOF

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

247700 Pieces

henvisning Pris

~~USD 1.132626~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IAUT165N08S5N029ATMA2 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IAUT165N08S5N029ATMA2

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IAUT165N08S5N029ATMA2

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET N-CH 165A 80V 120V 8HSOF

Serie : OptiMOS™

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 80V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 165A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 2.9 mOhm @ 80A, 10V

Vgs (th) (Max) @ Id : 3.8V @ 108µA

Gate Charge (Qg) (Max) @ Vgs : 90nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 6370pF @ 40V

FET-funktion : -

Power Dissipation (Max) : 167W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PG-HSOF-8-1

Pakke / tilfælde : 8-PowerSFN

Vægt : -

Tilstand : Nye og originale

relaterede links : IAUT165 , IAUT165N08

Dokumenter til IAUT165N08S5N029ATMA2

Dataark : IAUT165N08S5N029ATMA2.pdf

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