IPB11N03LA G - MOSFET N-CH 25V 30A D2PAK

Producentens varenummer
Intern Part Number
Kort beskrivelse
MOSFET N-CH 25V 30A D2PAK
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
9047 Pieces
henvisning Pris
USD 0
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IPB11N03LA G på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for IPB11N03LA G

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : IPB11N03LA G
Fabrikant : Infineon Technologies
Beskrivelse : MOSFET N-CH 25V 30A D2PAK
Serie : OptiMOS™
Del Status : Obsolete
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) : 25V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 30A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 11.2 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 5V
Vgs (Max) : ±20V
Inputkapacitans (Ciss) (Max) @ Vds : 1358pF @ 15V
FET-funktion : -
Power Dissipation (Max) : 52W (Tc)
Driftstemperatur : -55°C ~ 175°C (TJ)
Monteringstype : Surface Mount
Leverandør Device Package : PG-TO263-3-2
Pakke / tilfælde : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vægt : -
Tilstand : Nye og originale
relaterede links : IPB1 , IPB11N

Dokumenter til IPB11N03LA G

Dataark : IPB11N03LA G.pdf

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