BYWB29-200HE3/81 - DIODE GEN PURP 200V 8A TO263AB
Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
DIODE GEN PURP 200V 8A TO263AB
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
522690 Pieces
henvisning Pris
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])
- AX Semiconductor har BYWB29-200HE3/81 på lager til sælge.
- Shipping muligheder og forsendelse tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsmuligheder:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifikationer for BYWB29-200HE3/81
Kvalitet Garanti :
365 dage garanti
Stock Resource :
Franchise Distributør / Producent Direct
Oprindelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer :
BYWB29-200HE3/81
Fabrikant :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 200V 8A TO263AB
Serie :
-
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
200V
Nuværende - Gennemsnitlig Rectified (Io) :
8A
Spænding - Videresend (Vf) (Max) @ Hvis :
1.3V @ 20A
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
25ns
Nuværende - Reverse Lækage @ Vr :
10µA @ 200V
Kapacitans @ Vr, F :
-
Monteringstype :
Surface Mount
Pakke / tilfælde :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Leverandør Device Package :
TO-263AB
Driftstemperatur - Junction :
-65°C ~ 150°C
Vægt :
-
Tilstand :
Nye og originale
Dokumenter til BYWB29-200HE3/81
Dataark :
BYWB29-200HE3/81.pdf
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