BAS19-HE3-08 - DIODE GEN PURP 100V 200MA SOT23

Producentens varenummer
Intern Part Number
Kort beskrivelse
DIODE GEN PURP 100V 200MA SOT23
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
14423415 Pieces
henvisning Pris
USD 0.019452
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har BAS19-HE3-08 på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for BAS19-HE3-08

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : BAS19-HE3-08
Fabrikant : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 100V 200MA SOT23
Serie : Automotive, AEC-Q101
Del Status : Active
Diodetype : Standard
Spænding - DC-omvendt (Vr) (Max) : 100V
Nuværende - Gennemsnitlig Rectified (Io) : 200mA
Spænding - Videresend (Vf) (Max) @ Hvis : 1.25V @ 200mA
Hastighed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 50ns
Nuværende - Reverse Lækage @ Vr : 100nA @ 100V
Kapacitans @ Vr, F : 5pF @ 0V, 1MHz
Monteringstype : Surface Mount
Pakke / tilfælde : TO-236-3, SC-59, SOT-23-3
Leverandør Device Package : SOT-23
Driftstemperatur - Junction : -55°C ~ 150°C
Vægt : -
Tilstand : Nye og originale
relaterede links : BAS1 , BAS19-

Dokumenter til BAS19-HE3-08

Dataark : BAS19-HE3-08.pdf

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