1N5809US - DIODE GEN PURP 100V 3A B-MELF

Producentens varenummer

1N5809US

Intern Part Number

AX-1N5809US

Fabrikant

Microsemi Corporation

Kort beskrivelse

DIODE GEN PURP 100V 3A B-MELF

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

49650 Pieces

henvisning Pris

~~USD 6.78~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har 1N5809US på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for 1N5809US

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : 1N5809US

Fabrikant : Microsemi Corporation

Beskrivelse : DIODE GEN PURP 100V 3A B-MELF

Serie : -

Del Status : Active

Diodetype : Standard

Spænding - DC-omvendt (Vr) (Max) : 100V

Nuværende - Gennemsnitlig Rectified (Io) : 3A

Spænding - Videresend (Vf) (Max) @ Hvis : 875mV @ 4A

Hastighed : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 30ns

Nuværende - Reverse Lækage @ Vr : 5µA @ 100V

Kapacitans @ Vr, F : 60pF @ 10V, 1MHz

Monteringstype : Surface Mount

Pakke / tilfælde : SQ-MELF, B

Leverandør Device Package : B, SQ-MELF

Driftstemperatur - Junction : -65°C ~ 175°C

Vægt : -

Tilstand : Nye og originale

relaterede links : 1N , 1N58

Dokumenter til 1N5809US

Dataark : 1N5809US.pdf

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