NSB8JTHE3_A/P - DIODE GEN PURP 600V 8A TO263AB

Producentens varenummer

NSB8JTHE3_A/P

Intern Part Number

AX-NSB8JTHE3_A/P

Fabrikant

Vishay Semiconductor Diodes Division

Kort beskrivelse

DIODE GEN PURP 600V 8A TO263AB

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

643550 Pieces

henvisning Pris

~~USD 0.43596~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har NSB8JTHE3_A/P på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for NSB8JTHE3_A/P

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : NSB8JTHE3_A/P

Fabrikant : Vishay Semiconductor Diodes Division

Beskrivelse : DIODE GEN PURP 600V 8A TO263AB

Serie : Automotive, AEC-Q101

Del Status : Active

Diodetype : Standard

Spænding - DC-omvendt (Vr) (Max) : 600V

Nuværende - Gennemsnitlig Rectified (Io) : 8A

Spænding - Videresend (Vf) (Max) @ Hvis : 1.1V @ 8A

Hastighed : Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr) : -

Nuværende - Reverse Lækage @ Vr : 10µA @ 600V

Kapacitans @ Vr, F : 55pF @ 4V, 1MHz

Monteringstype : Surface Mount

Pakke / tilfælde : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Leverandør Device Package : TO-263AB

Driftstemperatur - Junction : -55°C ~ 150°C

Vægt : -

Tilstand : Nye og originale

relaterede links : NSB8 , NSB8JT

Dokumenter til NSB8JTHE3_A/P

Dataark : NSB8JTHE3_A/P.pdf

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