TPN7R506NH,L1Q - MOSFET N-CH 60V 26A 8TSON

Producentens varenummer

TPN7R506NH,L1Q

Intern Part Number

AX-TPN7R506NH,L1Q

Fabrikant

Toshiba Semiconductor and Storage

Kort beskrivelse

MOSFET N-CH 60V 26A 8TSON

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

1246280 Pieces

henvisning Pris

~~USD 0.22512~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har TPN7R506NH,L1Q på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for TPN7R506NH,L1Q

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : TPN7R506NH,L1Q

Fabrikant : Toshiba Semiconductor and Storage

Beskrivelse : MOSFET N-CH 60V 26A 8TSON

Serie : U-MOSVIII-H

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 60V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 26A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 6.5V, 10V

Rds On (Max) @ Id, Vgs : 7.5 mOhm @ 13A, 10V

Vgs (th) (Max) @ Id : 4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 1800pF @ 30V

FET-funktion : -

Power Dissipation (Max) : 700mW (Ta), 42W (Tc)

Driftstemperatur : 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : 8-TSON Advance (3.3x3.3)

Pakke / tilfælde : 8-PowerVDFN

Vægt : -

Tilstand : Nye og originale

relaterede links : TPN7 , TPN7R50

Dokumenter til TPN7R506NH,L1Q

Dataark : TPN7R506NH,L1Q.pdf

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