SCTW90N65G2V - SILICON CARBIDE POWER MOSFET 650
Producentens varenummer
Intern Part Number
AX-SCTW90N65G2V
Fabrikant
Kort beskrivelse
SILICON CARBIDE POWER MOSFET 650
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
12424 Pieces
henvisning Pris
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])
- AX Semiconductor har SCTW90N65G2V på lager til sælge.
- Shipping muligheder og forsendelse tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsmuligheder:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifikationer for SCTW90N65G2V
Kvalitet Garanti :
365 dage garanti
Stock Resource :
Franchise Distributør / Producent Direct
Oprindelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer :
SCTW90N65G2V
Fabrikant :
STMicroelectronics
Beskrivelse :
SILICON CARBIDE POWER MOSFET 650
Serie :
-
Del Status :
Active
FET Type :
N-Channel
Teknologi :
SiCFET (Silicon Carbide)
Afløb til Source Voltage (VDSS) :
650V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
90A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 50A, 18V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
157nC @ 18V
Vgs (Max) :
+22V, -10V
Inputkapacitans (Ciss) (Max) @ Vds :
3300pF @ 400V
FET-funktion :
-
Power Dissipation (Max) :
390W (Tc)
Driftstemperatur :
-55°C ~ 200°C (TJ)
Monteringstype :
Through Hole
Leverandør Device Package :
HiP247™
Pakke / tilfælde :
TO-247-3
Vægt :
-
Tilstand :
Nye og originale
Dokumenter til SCTW90N65G2V
Dataark :
SCTW90N65G2V.pdf
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