SCTW90N65G2V - SILICON CARBIDE POWER MOSFET 650

Producentens varenummer

SCTW90N65G2V

Intern Part Number

AX-SCTW90N65G2V

Fabrikant

STMicroelectronics

Kort beskrivelse

SILICON CARBIDE POWER MOSFET 650

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

12424 Pieces

henvisning Pris

~~USD 36.09~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SCTW90N65G2V på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SCTW90N65G2V

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SCTW90N65G2V

Fabrikant : STMicroelectronics

Beskrivelse : SILICON CARBIDE POWER MOSFET 650

Serie : -

Del Status : Active

FET Type : N-Channel

Teknologi : SiCFET (Silicon Carbide)

Afløb til Source Voltage (VDSS) : 650V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 90A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 18V

Rds On (Max) @ Id, Vgs : 25 mOhm @ 50A, 18V

Vgs (th) (Max) @ Id : 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 157nC @ 18V

Vgs (Max) : +22V, -10V

Inputkapacitans (Ciss) (Max) @ Vds : 3300pF @ 400V

FET-funktion : -

Power Dissipation (Max) : 390W (Tc)

Driftstemperatur : -55°C ~ 200°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : HiP247™

Pakke / tilfælde : TO-247-3

Vægt : -

Tilstand : Nye og originale

relaterede links : SCTW , SCTW90

Dokumenter til SCTW90N65G2V

Dataark : SCTW90N65G2V.pdf

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