IPD80R1K0CEATMA1 - MOSFET N-CH 800V 5.7A TO252-3

Producentens varenummer

IPD80R1K0CEATMA1

Intern Part Number

AX-IPD80R1K0CEATMA1

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 800V 5.7A TO252-3

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

614575 Pieces

henvisning Pris

~~USD 0.456516~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IPD80R1K0CEATMA1 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IPD80R1K0CEATMA1

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IPD80R1K0CEATMA1

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET N-CH 800V 5.7A TO252-3

Serie : CoolMOS™ CE

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 800V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 5.7A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 950 mOhm @ 3.6A, 10V

Vgs (th) (Max) @ Id : 3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 31nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 785pF @ 100V

FET-funktion : -

Power Dissipation (Max) : 83W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PG-TO252-3

Pakke / tilfælde : TO-252-3, DPak (2 Leads + Tab), SC-63

Vægt : -

Tilstand : Nye og originale

relaterede links : IPD80 , IPD80R1K

Dokumenter til IPD80R1K0CEATMA1

Dataark : IPD80R1K0CEATMA1.pdf

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