IPD80R1K0CEATMA1 - MOSFET N-CH 800V 5.7A TO252-3
Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
MOSFET N-CH 800V 5.7A TO252-3
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
614575 Pieces
henvisning Pris
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])
- AX Semiconductor har IPD80R1K0CEATMA1 på lager til sælge.
- Shipping muligheder og forsendelse tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsmuligheder:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifikationer for IPD80R1K0CEATMA1
Kvalitet Garanti :
365 dage garanti
Stock Resource :
Franchise Distributør / Producent Direct
Oprindelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer :
IPD80R1K0CEATMA1
Fabrikant :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 800V 5.7A TO252-3
Serie :
CoolMOS™ CE
Del Status :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
800V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
5.7A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
950 mOhm @ 3.6A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±20V
Inputkapacitans (Ciss) (Max) @ Vds :
785pF @ 100V
FET-funktion :
-
Power Dissipation (Max) :
83W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandør Device Package :
PG-TO252-3
Pakke / tilfælde :
TO-252-3, DPak (2 Leads + Tab), SC-63
Vægt :
-
Tilstand :
Nye og originale
Dokumenter til IPD80R1K0CEATMA1
Dataark :
IPD80R1K0CEATMA1.pdf
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