SI4931DY-T1-GE3 - MOSFET 2P-CH 12V 6.7A 8SOIC
Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
MOSFET 2P-CH 12V 6.7A 8SOIC
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
975780 Pieces
henvisning Pris
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])
- AX Semiconductor har SI4931DY-T1-GE3 på lager til sælge.
- Shipping muligheder og forsendelse tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsmuligheder:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifikationer for SI4931DY-T1-GE3
Kvalitet Garanti :
365 dage garanti
Stock Resource :
Franchise Distributør / Producent Direct
Oprindelsesland :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer :
SI4931DY-T1-GE3
Fabrikant :
Vishay Siliconix
Beskrivelse :
MOSFET 2P-CH 12V 6.7A 8SOIC
Serie :
TrenchFET®
Del Status :
Active
FET Type :
2 P-Channel (Dual)
FET-funktion :
Logic Level Gate
Afløb til Source Voltage (VDSS) :
12V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
6.7A
Rds On (Max) @ Id, Vgs :
18 mOhm @ 8.9A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs :
52nC @ 4.5V
Inputkapacitans (Ciss) (Max) @ Vds :
-
Strøm - Max :
1.1W
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / tilfælde :
8-SOIC (0.154", 3.90mm Width)
Leverandør Device Package :
8-SO
Vægt :
-
Tilstand :
Nye og originale
Dokumenter til SI4931DY-T1-GE3
Dataark :
SI4931DY-T1-GE3.pdf
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