SI7898DP-T1-E3 - MOSFET N-CH 150V 3A PPAK SO-8

Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
MOSFET N-CH 150V 3A PPAK SO-8
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
500030 Pieces
henvisning Pris
USD 0.56109
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SI7898DP-T1-E3 på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for SI7898DP-T1-E3

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : SI7898DP-T1-E3
Fabrikant : Vishay Siliconix
Beskrivelse : MOSFET N-CH 150V 3A PPAK SO-8
Serie : TrenchFET®
Del Status : Active
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) : 150V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 3A (Ta)
Drevspænding (Maks. Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 85 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 21nC @ 10V
Vgs (Max) : ±20V
Inputkapacitans (Ciss) (Max) @ Vds : -
FET-funktion : -
Power Dissipation (Max) : 1.9W (Ta)
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Leverandør Device Package : PowerPAK® SO-8
Pakke / tilfælde : PowerPAK® SO-8
Vægt : -
Tilstand : Nye og originale
relaterede links : SI78 , SI7898D

Dokumenter til SI7898DP-T1-E3

Dataark : SI7898DP-T1-E3.pdf

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