BYM12-100HE3_A/H - DIODE GEN PURP 100V 1A DO213AB
Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
DIODE GEN PURP 100V 1A DO213AB
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
3634715 Pieces
henvisning Pris
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])
- AX Semiconductor har BYM12-100HE3_A/H på lager til sælge.
- Shipping muligheder og forsendelse tid:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betalingsmuligheder:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifikationer for BYM12-100HE3_A/H
Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : BYM12-100HE3_A/H
Fabrikant : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 100V 1A DO213AB
Serie : Automotive, AEC-Q101, Superectifier®
Del Status : Active
Diodetype : Standard
Spænding - DC-omvendt (Vr) (Max) : 100V
Nuværende - Gennemsnitlig Rectified (Io) : 1A
Spænding - Videresend (Vf) (Max) @ Hvis : 1V @ 1A
Hastighed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Nuværende - Reverse Lækage @ Vr : 5µA @ 100V
Kapacitans @ Vr, F : 20pF @ 4V, 1MHz
Monteringstype : Surface Mount
Pakke / tilfælde : DO-213AB, MELF (Glass)
Leverandør Device Package : DO-213AB
Driftstemperatur - Junction : -65°C ~ 175°C
Vægt : -
Tilstand : Nye og originale
Dokumenter til BYM12-100HE3_A/H
Dataark : BYM12-100HE3_A/H.pdf
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