SUP60N10-18P-E3 - MOSFET N-CH 100V 60A TO220AB

Producentens varenummer

SUP60N10-18P-E3

Intern Part Number

AX-SUP60N10-18P-E3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET N-CH 100V 60A TO220AB

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

12048 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SUP60N10-18P-E3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SUP60N10-18P-E3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SUP60N10-18P-E3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET N-CH 100V 60A TO220AB

Serie : TrenchFET®

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 100V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 60A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 8V, 10V

Rds On (Max) @ Id, Vgs : 18.3 mOhm @ 15A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 75nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 2600pF @ 50V

FET-funktion : -

Power Dissipation (Max) : 3.75W (Ta), 150W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : TO-220AB

Pakke / tilfælde : TO-220-3

Vægt : -

Tilstand : Nye og originale

relaterede links : SUP60 , SUP60N1

Dokumenter til SUP60N10-18P-E3

Dataark : SUP60N10-18P-E3.pdf

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