BSZ0910NDXTMA1 - DIFFERENTIATED MOSFETS

Producentens varenummer

BSZ0910NDXTMA1

Intern Part Number

AX-BSZ0910NDXTMA1

Fabrikant

Infineon Technologies

Kort beskrivelse

DIFFERENTIATED MOSFETS

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

859425 Pieces

henvisning Pris

~~USD 0.326454~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har BSZ0910NDXTMA1 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for BSZ0910NDXTMA1

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : BSZ0910NDXTMA1

Fabrikant : Infineon Technologies

Beskrivelse : DIFFERENTIATED MOSFETS

Serie : OptiMOS™

Del Status : Active

FET Type : 2 N-Channel (Dual)

FET-funktion : Logic Level Gate, 4.5V Drive

Afløb til Source Voltage (VDSS) : 30V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 9.5A (Ta), 25A (Tc)

Rds On (Max) @ Id, Vgs : 9.5 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 5.6nC @ 4.5V

Inputkapacitans (Ciss) (Max) @ Vds : 800pF @ 15V

Strøm - Max : 1.9W (Ta), 31W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / tilfælde : 8-PowerVDFN

Leverandør Device Package : PG-WISON-8

Vægt : -

Tilstand : Nye og originale

relaterede links : BSZ0 , BSZ0910

Dokumenter til BSZ0910NDXTMA1

Dataark : BSZ0910NDXTMA1.pdf

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