CDBGBSC101200-G - DIODE DUAL SILICON CARBIDE POWER

Producentens varenummer

CDBGBSC101200-G

Intern Part Number

AX-CDBGBSC101200-G

Fabrikant

Comchip Technology

Kort beskrivelse

DIODE DUAL SILICON CARBIDE POWER

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

66965 Pieces

henvisning Pris

~~USD 4.1895~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har CDBGBSC101200-G på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for CDBGBSC101200-G

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : CDBGBSC101200-G

Fabrikant : Comchip Technology

Beskrivelse : DIODE DUAL SILICON CARBIDE POWER

Serie : -

Del Status : Active

Diode Konfiguration : 1 Pair Common Cathode

Diodetype : Silicon Carbide Schottky

Spænding - DC-omvendt (Vr) (Max) : 1200V

Nuværende - Gennemsnitlig Rectified (Io) (pr. Diode) : 18A (DC)

Spænding - Videresend (Vf) (Max) @ Hvis : 1.7V @ 5A

Hastighed : No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr) : 0ns

Nuværende - Reverse Lækage @ Vr : 100µA @ 1200V

Driftstemperatur - Junction : -55°C ~ 175°C

Monteringstype : Through Hole

Pakke / tilfælde : TO-247-3

Leverandør Device Package : TO-247

Vægt : -

Tilstand : Nye og originale

relaterede links : CDBGB , CDBGBSC

Dokumenter til CDBGBSC101200-G

Dataark : CDBGBSC101200-G.pdf

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