EPC8002 - GANFET TRANS 65V 2.7A BUMPED DIE

Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
GANFET TRANS 65V 2.7A BUMPED DIE
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
327450 Pieces
henvisning Pris
USD 0.8568
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har EPC8002 på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for EPC8002

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : EPC8002
Fabrikant : EPC
Beskrivelse : GANFET TRANS 65V 2.7A BUMPED DIE
Serie : eGaN®
Del Status : Active
FET Type : N-Channel
Teknologi : GaNFET (Gallium Nitride)
Afløb til Source Voltage (VDSS) : 65V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 2A (Ta)
Drevspænding (Maks. Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 530 mOhm @ 500mA, 5V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : +6V, -4V
Inputkapacitans (Ciss) (Max) @ Vds : 21pF @ 32.5V
FET-funktion : -
Power Dissipation (Max) : -
Driftstemperatur : -40°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Leverandør Device Package : Die
Pakke / tilfælde : Die
Vægt : -
Tilstand : Nye og originale
relaterede links : EP , EPC

Dokumenter til EPC8002

Dataark : EPC8002.pdf

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