IGLD60R070D1AUMA1 - IC GAN FET 600V 60A 8SON

Producentens varenummer

IGLD60R070D1AUMA1

Intern Part Number

AX-IGLD60R070D1AUMA1

Fabrikant

Infineon Technologies

Kort beskrivelse

IC GAN FET 600V 60A 8SON

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

41041 Pieces

henvisning Pris

~~USD 9.569868~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IGLD60R070D1AUMA1 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IGLD60R070D1AUMA1

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IGLD60R070D1AUMA1

Fabrikant : Infineon Technologies

Beskrivelse : IC GAN FET 600V 60A 8SON

Serie : CoolGaN™

Del Status : Active

FET Type : N-Channel

Teknologi : GaNFET (Gallium Nitride)

Afløb til Source Voltage (VDSS) : 600V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 15A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : -

Rds On (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : 1.6V @ 2.6mA

Gate Charge (Qg) (Max) @ Vgs : -

Vgs (Max) : -10V

Inputkapacitans (Ciss) (Max) @ Vds : 380pF @ 400V

FET-funktion : -

Power Dissipation (Max) : 114W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PG-LSON-8-1

Pakke / tilfælde : 8-LDFN Exposed Pad

Vægt : -

Tilstand : Nye og originale

relaterede links : IGLD6 , IGLD60R0

Dokumenter til IGLD60R070D1AUMA1

Dataark : IGLD60R070D1AUMA1.pdf

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