SE10FJHM3/H - DIODE GEN PURP 600V 1A DO219AB

Producentens varenummer
Intern Part Number
Kort beskrivelse
DIODE GEN PURP 600V 1A DO219AB
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
5281305 Pieces
henvisning Pris
USD 0.053124
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SE10FJHM3/H på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for SE10FJHM3/H

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : SE10FJHM3/H
Fabrikant : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 600V 1A DO219AB
Serie : Automotive, AEC-Q101
Del Status : Active
Diodetype : Standard
Spænding - DC-omvendt (Vr) (Max) : 600V
Nuværende - Gennemsnitlig Rectified (Io) : 1A
Spænding - Videresend (Vf) (Max) @ Hvis : 1.05V @ 1A
Hastighed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 780ns
Nuværende - Reverse Lækage @ Vr : 5µA @ 600V
Kapacitans @ Vr, F : 7.5pF @ 4V, 1MHz
Monteringstype : Surface Mount
Pakke / tilfælde : DO-219AB
Leverandør Device Package : DO-219AB (SMF)
Driftstemperatur - Junction : -55°C ~ 175°C
Vægt : -
Tilstand : Nye og originale
relaterede links : SE1 , SE10F

Dokumenter til SE10FJHM3/H

Dataark : SE10FJHM3/H.pdf

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