BYG10KHE3_A/I - DIODE AVALANCHE 800V 1.5A DO214

Producentens varenummer

BYG10KHE3_A/I

Intern Part Number

AX-BYG10KHE3_A/I

Fabrikant

Vishay Semiconductor Diodes Division

Kort beskrivelse

DIODE AVALANCHE 800V 1.5A DO214

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

3090590 Pieces

henvisning Pris

~~USD 0.09078~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har BYG10KHE3_A/I på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for BYG10KHE3_A/I

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : BYG10KHE3_A/I

Fabrikant : Vishay Semiconductor Diodes Division

Beskrivelse : DIODE AVALANCHE 800V 1.5A DO214

Serie : Automotive, AEC-Q101

Del Status : Active

Diodetype : Avalanche

Spænding - DC-omvendt (Vr) (Max) : 800V

Nuværende - Gennemsnitlig Rectified (Io) : 1.5A

Spænding - Videresend (Vf) (Max) @ Hvis : 1.15V @ 1.5A

Hastighed : Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 4µs

Nuværende - Reverse Lækage @ Vr : 1µA @ 800V

Kapacitans @ Vr, F : -

Monteringstype : Surface Mount

Pakke / tilfælde : DO-214AC, SMA

Leverandør Device Package : DO-214AC (SMA)

Driftstemperatur - Junction : -55°C ~ 150°C

Vægt : -

Tilstand : Nye og originale

relaterede links : BYG1 , BYG10K

Dokumenter til BYG10KHE3_A/I

Dataark : BYG10KHE3_A/I.pdf

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