SIA417DJ-T1-GE3 - MOSFET P-CH 8V 12A SC70-6

Producentens varenummer
Intern Part Number
Fabrikant
Kort beskrivelse
MOSFET P-CH 8V 12A SC70-6
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
6736 Pieces
henvisning Pris
USD 0
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har SIA417DJ-T1-GE3 på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for SIA417DJ-T1-GE3

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : SIA417DJ-T1-GE3
Fabrikant : Vishay Siliconix
Beskrivelse : MOSFET P-CH 8V 12A SC70-6
Serie : TrenchFET®
Del Status : Obsolete
FET Type : P-Channel
Teknologi : MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) : 8V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 12A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) : 1.2V, 4.5V
Rds On (Max) @ Id, Vgs : 23 mOhm @ 7A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 32nC @ 5V
Vgs (Max) : ±5V
Inputkapacitans (Ciss) (Max) @ Vds : 1600pF @ 4V
FET-funktion : -
Power Dissipation (Max) : 3.5W (Ta), 19W (Tc)
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Surface Mount
Leverandør Device Package : PowerPAK® SC-70-6 Single
Pakke / tilfælde : PowerPAK® SC-70-6
Vægt : -
Tilstand : Nye og originale
relaterede links : SIA41 , SIA417D

Dokumenter til SIA417DJ-T1-GE3

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