IRFH7110TR2PBF - MOSFET N CH 100V 11A PQFN5X6

Producentens varenummer

IRFH7110TR2PBF

Intern Part Number

AX-IRFH7110TR2PBF

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET N CH 100V 11A PQFN5X6

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

15912 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IRFH7110TR2PBF på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IRFH7110TR2PBF

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IRFH7110TR2PBF

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET N CH 100V 11A PQFN5X6

Serie : HEXFET®

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 100V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 11A (Ta), 58A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 13.5 mOhm @ 35A, 10V

Vgs (th) (Max) @ Id : 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs : 87nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 3240pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 3.6W (Ta), 104W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : 8-PQFN (5x6)

Pakke / tilfælde : 8-TQFN Exposed Pad

Vægt : -

Tilstand : Nye og originale

relaterede links : IRFH , IRFH711

Dokumenter til IRFH7110TR2PBF

Dataark : IRFH7110TR2PBF.pdf

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