IPS110N12N3GBKMA1 - MOSFET N-CH 120V 75A TO251-3

Producentens varenummer

IPS110N12N3GBKMA1

Intern Part Number

AX-IPS110N12N3GBKMA1

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 120V 75A TO251-3

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

10024 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

AX Semiconductor har IPS110N12N3GBKMA1 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IPS110N12N3GBKMA1

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IPS110N12N3GBKMA1

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET N-CH 120V 75A TO251-3

Serie : OptiMOS™

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 120V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 75A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 11 mOhm @ 75A, 10V

Vgs (th) (Max) @ Id : 4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs : 65nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 4310pF @ 60V

FET-funktion : -

Power Dissipation (Max) : 136W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : PG-TO251-3

Pakke / tilfælde : TO-251-3 Stub Leads, IPak

Vægt : -

Tilstand : Nye og originale

relaterede links : IPS11 , IPS110N1

Dokumenter til IPS110N12N3GBKMA1

Dataark : IPS110N12N3GBKMA1.pdf

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